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IXGH40N30BD1

Part No IXGH40N30BD1
Manufacturer IXYS
Description HiPerFASTTM IGBT
Sample
Rohs State rohs
ECAD Module
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Manufacturer IXYS
Win Source Part Number 1191191-IXGH40N30BD1
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXGH40N30BD1 CAD Model

Description

The IXGH40N30BD1 is a high-voltage, high-current IGBT (Insulated Gate Bipolar Transistor) manufactured by IXYS. It is designed for switching applications that require efficient and reliable performance at high power levels. This IGBT combines the advantages of both MOSFETs and bipolar transistors, offering fast switching speeds and low on-state voltage drop.

Applications

  • Motor Control
  • Uninterruptible Power Supplies (UPS)
  • Welding Equipment
  • Induction Heating
  • Power Inverters

Features

  • High Voltage Rating (e.g., 300V)
  • High Current Rating (e.g., 40A)
  • Fast Switching Speed
  • Low On-State Voltage Drop (VCE(sat))
  • Avalanche Rated
  • TO-247 Package
  • Isolated Mounting Base

Benefits

  • Efficient Switching: Fast switching speeds minimize switching losses, improving overall system efficiency.
  • High Power Handling: Capable of handling high voltage and current levels, making it suitable for demanding applications.
  • Reliable Performance: Robust design and avalanche rating ensure reliable operation under challenging conditions.
  • Simplified Drive Circuitry: Requires relatively simple gate drive circuitry compared to bipolar transistors.
  • Reduced Heat Dissipation: Low on-state voltage drop minimizes power dissipation and reduces the need for extensive cooling.

Additional Details

The IXGH40N30BD1 is an N-channel IGBT that is turned on by applying a positive voltage to its gate. The low on-state voltage drop (VCE(sat)) minimizes conduction losses when the IGBT is conducting current. The fast switching speed allows for high-frequency operation, which is essential in many modern power electronic applications. The avalanche rating indicates the device's ability to withstand transient voltage spikes without damage. The TO-247 package provides good thermal conductivity, allowing for efficient heat dissipation. This IGBT is often used in conjunction with a gate driver circuit to provide the necessary gate voltage and current. Careful consideration should be given to the gate resistor value and snubber circuits to optimize switching performance and minimize voltage overshoot. Consult the manufacturer's datasheet for detailed specifications and application notes.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.9222 $67.2106
54+ $2.3984 $129.5136
84+ $2.3233 $195.1572
116+ $2.2483 $260.8028
149+ $2.1732 $323.8068
200+ $1.9481 $389.6200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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