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Same model may have multiple batches, images only for reference.
IXGP36N60A3 Real Image
Same model may have multiple batches, images only for reference.

IXGP36N60A3

Part No IXGP36N60A3
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT / IGBT PT 600 V 220 W Through Hole TO-220-3
Datasheet
IXGP36N60A3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series GenX3™
Package Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 1.4V @ 15V, 30A
Power - Max 220 W
Switching Energy 740µJ (on), 3mJ (off)
Input Type Standard
Gate Charge 80 nC
Td (on/off) @ 25°C 18ns/330ns
Test Condition 400V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr) 23 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Base Product Number IXGP36
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 977625-IXGP36N60A3
Ultra Librarian 3D Model Ultra Librarian IXGP36N60A3 CAD Model

Description

The IXGP36N60A3 is a GenX3™ IGBT transistor designed for use in discrete semiconductor products. IXGP36N60A3 is a GenX3™ IGBT transistor designed for use in discrete semiconductor products.

  • Package: TO-220-3
  • Power Rating: 220 W
  • Collector-Emitter Breakdown Voltage: 600 V
  • IGBT Type: PT
  • Maximum Collector Current: 200 A
  • Switching Energy (on): 740μJ
  • Switching Energy (off): 3mJ
  • Gate Charge: 80 nC
  • Reverse Recovery Time (trr): 23 ns
  • Input Type: Standard
  • Operating Temperature Range: -55°C to 150°C (TJ)

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