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Same model may have multiple batches, images only for reference.
IXGR60N60C3D1 Real Image
Same model may have multiple batches, images only for reference.

IXGR60N60C3D1

Part No IXGR60N60C3D1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 75A 170W ISOPLUS247  /  IGBT PT 600 V 75 A 170 W Through Hole ISOPLUS247™
Datasheet
IXGR60N60C3D1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr IXYS
Series GenX3™
Package Tube
Product Status Obsolete
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 260 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Power - Max 170 W
Switching Energy 800µJ (on), 450µJ (off)
Input Type Standard
Gate Charge 115 nC
Td (on/off) @ 25°C 21ns/70ns
Test Condition 480V, 40A, 3Ohm, 15V
Reverse Recovery Time (trr) 25 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package ISOPLUS247™
Base Product Number IXGR60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
Win Source Part Number 1201890-IXGR60N60C3D1
Ultra Librarian 3D Model Ultra Librarian IXGR60N60C3D1 CAD Model

Description

The 1201890-IXGR60N60C3D1 is a GenX3™ IGBT transistor with a maximum power of 170 W.

  • Power: 170 W (Max)
  • Reverse Recovery Time (trr): 25 ns
  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 260 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Switching Energy: 800μJ (on), 450μJ (off)
  • Gate Charge: 115 nC
  • Td (on/off) @ 25°C: 21ns/70ns
  • Test Condition: 480V, 40A, 3Ohm, 15V
  • Mounting Type: through hole
  • Package/Case: TO-247-3
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Manufacturer: IXYS

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