The IXGT30N120B3D1 is a GenX3™ IGBT transistor from IXYS.

• Maximum Power Rating: 300 W
• Reverse Recovery Time: 100 ns
• IGBT Type: PT
• Voltage Collector Emitter Breakdown: 1200 V
• Maximum Collector Pulsed Current: 150 A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
• Switching Energy: 3.47mJ (on), 2.16mJ (off)
• Gate Charge: 87 nC
• Td (on/off) @ 25°C: 16ns/127ns
• Mounting Type: Surface-Mount Device (SMD)
• Package: TO-268-3, D²Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268AA
• Operating Temperature Range: -55°C and 150°C (TJ)