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Same model may have multiple batches, images only for reference.
IXKK85N60C Real Image
Same model may have multiple batches, images only for reference.

IXKK85N60C

Part No IXKK85N60C
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 85A TO264A / N-Channel 600 V 85A (Tc) Through Hole TO-264AA
Datasheet
IXKK85N60C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 650 nC @ 10 V
Vgs (Max) ±20V
FET Feature Super Junction
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-264AA
Case / Package TO-264-3, TO-264AA
Base Product Number IXKK85
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 25
Win Source Part Number 1324581-IXKK85N60C
Ultra Librarian 3D Model Ultra Librarian IXKK85N60C CAD Model

Description

The IXKK85N60C is an N-channel MOSFET transistor from IXYS. It has a maximum drain to source voltage of 600V and a continuous drain current of 85A at 25°C.

  • Maximum on-state resistance: 36mOhm @ 55A and 10V gate to source voltage
  • Package: TO-264AA package
  • Gate Charge: 650nC @ 10V
  • Maximum gate-source voltage: ±20V
  • Maximum operating temperature range: -55°C to 150°C
  • ROHS3 Compliant: Yes
  • ECCN: EAR99
  • Series: IXKK85 is a series of N-channel MOSFET transistors with various specifications

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $59.5828 $59.5828
3+ $48.8885 $146.6655
4+ $47.3607 $189.4428
6+ $45.8329 $274.9974
7+ $44.3053 $310.1371
9+ $39.7218 $357.4962
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Availability: 400 pieces
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