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Same model may have multiple batches, images only for reference.
IXSH30N60CD1 Real Image
Same model may have multiple batches, images only for reference.

IXSH30N60CD1

Part No IXSH30N60CD1
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 600V 55A 200W TO247AD
Datasheet
IXSH30N60CD1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Bulk
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 55A
Pulsed Collector Current 110A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 30A
Maximum Power Dissipation 200W
Total Switching Energy(Ets) 700μJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 30ns/90ns
Testing Conditions 480V, 30A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD (IXSH)
Win Source Part Number 1049702-IXSH30N60CD1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXSH30N60CD1 CAD Model

Description

The IXYS IXSH30N60CD1 IGBT is a high-performance transistor designed for use in discrete semiconductor products.

  • Maximum power dissipation: 200W
  • Collector-emitter breakdown voltage: 600V
  • Pulsed collector current: 110A
  • Collector-emitter saturation voltage: 2.5V @ 15V, 30A
  • Gate charge: 100nC
  • Operating temperature range: -55°C to 150°C (TJ)
  • Available in: a TO-247AD package
  • Suitable for: use in high-power applications such as power supplies, motor control, and lighting.

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