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IXSX35N120BD1

Part No IXSX35N120BD1
Manufacturer IXYS
Catalog IGBTs - Single
Description HIGH VOLTAGE IGBT WITH DIODE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Part Status Obsolete(EOL)
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 70A
Current - Collector Pulsed (Icm) 140A
Vce(on) (Maximum) @ Vge, Ic 3.6V @ 15V, 35A
Power - Max 300W
Switching Energy 5mJ (off)
Input Type Standard
Gate Charge 120nC
Td (on/off) @ 25°C 36ns/160ns
Test Condition 960V, 35A, 5 Ohm, 15V
Reverse Recovery Time (trr) 40ns
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package PLUS247-3
Win Source Part Number 1191228-IXSX35N120BD1
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXSX35N120BD1
Introduction Date August 10, 2000
ECCN EAR99
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian IXSX35N120BD1 CAD Model

Description

The IXSX35N120BD1 is a PT type IGBT manufactured by IXYS.

  • Package: TO-247-3
  • Maximum Power Rating: 300W
  • Current Rating: 70A
  • Voltage Breakdown: 1200V
  • Switching Energy: 5mJ (off)
  • Gate Charge: 120nC
  • Mounting: Through-Hole
  • Ideal for: Discrete semiconductor products

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