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Same model may have multiple batches, images only for reference.
IXTA152N085T7 Real Image
Same model may have multiple batches, images only for reference.

IXTA152N085T7

Part No IXTA152N085T7
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 152A TO-263-7
Datasheet
IXTA152N085T7 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 85V
Continuous Drain Current at 25°C 152A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 5500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263-7 (IXTA..7)
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 205700-IXTA152N085T7
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTA152N085T7 CAD Model

Description

The IXTA152N085T7 is a MOSFET transistor from IXYS that is designed for N-Channel polarity with a drain-source breakdown voltage of 85V.

  • Maximum Power Dissipation: 360W
  • Continuous Drain Current: 152A @ 25°C
  • Package: TO-263-7 package
  • Maximum Rds On: 7 mOhm @ 25A, 10V
  • Status: Obsolete
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8718 $58.4616
29+ $3.9975 $115.9275
45+ $3.8727 $174.2715
62+ $3.7480 $232.3760
80+ $3.6232 $289.8560
107+ $3.2479 $347.5253
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Availability: 34,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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