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IXTA160N10T

Part No IXTA160N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description TrenchMV Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Series TrenchMV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 132nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6600pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 430W (Tc)
Rds On (Maximum) @ Id, Vgs 7 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (IXTA)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1191233-IXTA160N10T
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Family Name IXTA160N10T
Introduction Date December 20, 2006
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXTA160N10T CAD Model

Description

The IXYS IXTA160N10T is a MOSFET component that operates @ a temperature range of -55°C to 175°C.

  • Manufacturer: IXYS
  • Win Source Part Number: 1191233-IXTA160N10T
  • Category: Discrete Semiconductor Products
  • Series: TrenchMV
  • Maximum Power Dissipation: 430W
  • Maximum Drain-Source Voltage: 100V
  • Application: recommended for applications that require a MOSFET component with a current of 160A

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.9293 $59.1516
29+ $4.0446 $117.2934
45+ $3.9182 $176.3190
61+ $3.7919 $231.3059
79+ $3.6654 $289.5666
106+ $3.2862 $348.3372
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,600 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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