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Same model may have multiple batches, images only for reference.
IXTA180N10T Real Image
Same model may have multiple batches, images only for reference.

IXTA180N10T

Part No IXTA180N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel Enhancement Mode Avalanche Rated
Datasheet
IXTA180N10T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series TrenchMV
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 151nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6900pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 480W (Tc)
Rds On (Maximum) @ Id, Vgs 6.4 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (IXTA)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1191234-IXTA180N10T
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTA180N10T
Introduction Date December 19, 2006
ECCN EAR99
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTA180N10T CAD Model

Description

The IXTA180N10T is a power MOSFET transistor manufactured by IXYS.

  • Series: TrenchMV.
  • Applications: Power management.
  • Drain-Source Voltage (Maximum): 100V.
  • Drain Current (Continuous): 180A.
  • Package: TO-263-3, D2Pak.
  • Compliance: RoHS compliant.
  • Power Dissipation (Maximum): 480W.
  • Supply: Limited.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.2585 $50.8095
17+ $5.9557 $101.2469
26+ $5.7696 $150.0096
36+ $5.5835 $201.0060
47+ $5.3973 $253.6731
62+ $4.8390 $300.0180
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Availability: 280 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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