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Same model may have multiple batches, images only for reference.
IXTA36N30P Real Image
Same model may have multiple batches, images only for reference.

IXTA36N30P

Part No IXTA36N30P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 36A TO-263
Datasheet
IXTA36N30P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 2250pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-263 (IXTA)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1049733-IXTA36N30P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTA36N30P CAD Model

Description

The IXYS IXTA36N30P is an N-channel MOSFET with a drain-source breakdown voltage of 300V and a continuous drain current of 36A.

  • Drain-Source Breakdown Voltage: 300V
  • Continuous Drain Current: 36A
  • Maximum Rds On: 110 mOhm @ 18A, 10V
  • Applications: Power supply, motor control, and lighting applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3036 $51.6432
29+ $3.5312 $102.4048
44+ $3.4209 $150.5196
61+ $3.3105 $201.9405
79+ $3.2002 $252.8158
105+ $2.8691 $301.2555
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Availability: 470 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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