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Same model may have multiple batches, images only for reference.
IXTA3N110 Real Image
Same model may have multiple batches, images only for reference.

IXTA3N110

Part No IXTA3N110
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1100V 3A TO-263 / Trans MOSFET N-CH 1.1KV 3A 3-Pin(2+Tab) D2PAK
Datasheet
IXTA3N110 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1100V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1350pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 150W (Tc)
Rds On (Maximum) @ Id, Vgs 4 Ohm @ 1.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (IXTA)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 777646-IXTA3N110
Popularity Medium
Supply and Demand Status Limited
Family Name IXTA3N110
Ultra Librarian 3D Model Ultra Librarian IXTA3N110 CAD Model

Description

The IXYS 777646-IXTA3N110 is a MOSFET technology-based electronic component manufactured by IXYS.

  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting: SMD
  • Family Name: IXTA3N110
  • Drive Voltage: 10V
  • Power Dissipation (Tc): 150W

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