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IXTA42N15T-TRL

Part No IXTA42N15T-TRL
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 42A TO263 / N-Channel 150 V 42A (Tc) 200W (Tc) Surface Mount TO-263 (D2Pak)
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Trench
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1880 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IXTA42
Standard Package 800
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346885-IXTA42N15T-TRL
Ultra Librarian 3D Model Ultra Librarian IXTA42N15T-TRL CAD Model

Description

IXYS Trench IXTA42N15T-TRL is an N-channel MOSFET transistor that has a continuous drain current of 42A @ 25°C and a breakdown voltage of 150V.

  • Maximum Rds On: 45mOhm @ 21A and 10V
  • Transistor Package: TO-263AB
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Gate Charge: 21nC @ 10V
  • Input Capacitance: 1880pF @ 25V
  • Manufacturer: IXYS
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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