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IXTA75N10P-TRL

Part No IXTA75N10P-TRL
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO263 / N-Channel 100 V 75A (Tc) 360W (Tc) Surface Mount TO-263 (D2Pak)
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Polar
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 25 V
Power Dissipation (Max) 360W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D2Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IXTA75
Standard Package 800
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346872-IXTA75N10P-TRL
Ultra Librarian 3D Model Ultra Librarian IXTA75N10P-TRL CAD Model

Description

The IXTA75N10P-TRL is a N-Channel MOSFET type manufactured by IXYS. It comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package and is mounted through surface mount.

  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: Surface Mount
  • Drain to Source Voltage (Vdss): 100 V
  • Power Dissipation (Max): 360W (Tc)
  • Vgs (Max): ±20V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • REACH: Unaffected
  • HTSUS: 8541.29.0095
  • Drive Voltage: 10V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 37.5A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V

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