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Same model may have multiple batches, images only for reference.
IXTT38N30L2HV
Same model may have multiple batches, images only for reference.

IXTT38N30L2HV

Part No IXTT38N30L2HV
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 38A TO268HV / N-Channel 300 V 38A (Tc) 400W (Tc) Surface Mount TO-268HV (IXTT)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Linear L2™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 25 V
Power Dissipation (Max) 400W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268HV (IXTT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Base Product Number IXTT38
Standard Package 30
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346871-IXTT38N30L2HV
Ultra Librarian 3D Model Ultra Librarian IXTT38N30L2HV CAD Model

Description

The IXTT38N30L2HV is an N-channel MOSFET transistor from IXYS, designed for use in discrete semiconductor products. With a drain to source voltage of 300V and a power dissipation of up to 400W (Tc), this transistor is ideal for a range of applications.

  • Drain to Source Voltage: 300V
  • Power Dissipation: 400W (Tc)
  • Mounting Type: Surface Mount
  • Package/Case: TO-268-3, D²Pak (2 Leads + Tab), TO-268AA
  • Temperature Range: -55°C to 150°C (TJ)
  • Current-Continuous Drain: 38A (Tc)
  • Rds On (Max): 100mOhm @ 19A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V

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