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Same model may have multiple batches, images only for reference.
IXTA80N12T2 Real Image
Same model may have multiple batches, images only for reference.

IXTA80N12T2

Part No IXTA80N12T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 80A TO-263 / Trans MOSFET N-CH 120V 80A 3-Pin(2+Tab) TO-263AA
Datasheet
IXTA80N12T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series TrenchT2
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 120V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 80nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4740pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 325W (Tc)
Rds On (Maximum) @ Id, Vgs 17 mOhm @ 40A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package TO-263 (IXTA)
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 777651-IXTA80N12T2
Popularity Medium
Supply and Demand Status Balance
Family Name IXTA80N12T2
Introduction Date August 06, 2013
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IXTA80N12T2 CAD Model

Description

The IXYS IXTA80N12T2 is a MOSFET transistor manufactured by IXYS.

  • Series: TrenchT2
  • Continuous Drain Current @ 25°C: 80A
  • Power Dissipation @ 25°C: 325W
  • Drain-Source Voltage: 120V
  • Gate-Source Voltage: ±20V
  • Gate Charge @ 10V: 80nC
  • Input Capacitance @ 25V: 4740pF
  • Rds On @ 40A and 10V: 17 mOhm
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting: SMD
  • Operating Temperature Range (TJ): -55°C to 175°C
  • Cross-Reference: STB80NF12T4 and STB80NF12

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