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Same model may have multiple batches, images only for reference.
IXTA8N65X2 Real Image
Same model may have multiple batches, images only for reference.

IXTA8N65X2

Part No IXTA8N65X2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 8A TO263 / N-Channel 650 V 8A (Tc) 150W (Tc) Surface Mount TO-263
Datasheet
IXTA8N65X2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IXTA8
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346815-IXTA8N65X2
Ultra Librarian 3D Model Ultra Librarian IXTA8N65X2 CAD Model

Description

The IXTA8N65X2 is a N-channel MOSFET transistor from the Ultra X2 series of IXYS.

  • Drain to Source Voltage: 650 V
  • Power Dissipation: 150W (Tc)
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Mounting Type: Surface Mount
  • Maximum Vgs: ±30V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Rds On (Max): 500mOhm @ 4A, 10V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)

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