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Same model may have multiple batches, images only for reference.
IXTA90N055T Real Image
Same model may have multiple batches, images only for reference.

IXTA90N055T

Part No IXTA90N055T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 90A TO263 / N-Channel 55 V 90A (Tc) 176W (Tc) Surface Mount TO-263AA
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchT2™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V
Power Dissipation (Max) 176W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA
Package / Case TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Base Product Number IXTA90
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346856-IXTA90N055T
Ultra Librarian 3D Model Ultra Librarian IXTA90N055T CAD Model

Description

The IXYS 1346856-IXTA90N055T is a high-performance N-Channel MOSFET designed for use in applications that require a high level of reliability.

  • Maximum Drain-Source Voltage: 55V
  • Continuous Drain Current: 90A
  • Package: TO-263AB
  • Temperature Range: -55°C to 175°C
  • Rds On: 8.8mOhm @ 25A and 10V
  • Gate Charge: 61nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.5292 $58.7628
22+ $5.3569 $117.8518
34+ $5.1894 $176.4396
46+ $5.0219 $231.0074
60+ $4.8545 $291.2700
80+ $4.3532 $348.2560
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Availability: 1,200 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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