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IXTH180N10T

Part No IXTH180N10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 180A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 151nC @ 10V
Max Input Capacitance 6900pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 480W (Tc)
Maximum Rds On at Id,Vgs 6.4 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049775-IXTH180N10T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH180N10T CAD Model

Description

The IXYS IXTH180N10T is an active electronic component that is used in a variety of applications.

  • Manufacturer: IXYS
  • Win Source Part Number: 1049775
  • Device Type: N-channel MOSFET
  • Maximum Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current: 180A (Tc) @ 25°C
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On: 6.4 mOhm @ 25A, 10V
  • Package: TO-247-3
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.7981 $57.9810
25+ $4.7574 $118.9350
38+ $4.6085 $175.1230
52+ $4.4606 $231.9512
67+ $4.3116 $288.8772
90+ $3.8658 $347.9220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,100 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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