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Same model may have multiple batches, images only for reference.
IXTH40N30 Real Image
Same model may have multiple batches, images only for reference.

IXTH40N30

Part No IXTH40N30
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 40A TO-247AD
Datasheet
IXTH40N30 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 4600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049804-IXTH40N30
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Automotive, Communications & Networking, Computers & Computer Peripherals, Consumer Electronics, Industrial
Ultra Librarian 3D Model Ultra Librarian IXTH40N30 CAD Model

Description

The IXTH40N30 is an N-channel MOSFET manufactured by IXYS with a maximum drain-source breakdown voltage of 300V and a continuous drain current of 40A @ 25°C.

  • On-Resistance: 85 mOhm @ 500mA and 10V gate-source voltage
  • Package: TO-247 package
  • Operating Temperature Range: -55°C to 150°C
  • Suitable for: use in discrete semiconductor products
  • Applications: automotive, communications & networking, computers & computer peripherals, consumer electronics, and industrial

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