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Same model may have multiple batches, images only for reference.
IXTH420N04T2 Real Image
Same model may have multiple batches, images only for reference.

IXTH420N04T2

Part No IXTH420N04T2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 420A TO-247
Datasheet
IXTH420N04T2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 420A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 315nC @ 10V
Max Input Capacitance 19700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 935W (Tc)
Maximum Rds On at Id,Vgs 2 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049807-IXTH420N04T2
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH420N04T2 CAD Model

Description

The IXYS IXTH420N04T2 is a high-power N-channel MOSFET that is part of the Discrete Semiconductor Products category.

  • Maximum Power Dissipation: 935W (Tc)
  • Continuous Drain Current: 420A (Tc) @ 25°C
  • Maximum Rds On @ Id,Vgs: 2 mOhm @ 100A, 10V
  • Gate-Source Threshold Voltage: 3.5V @ 250μA
  • Package: TO-247-3
  • Drain-Source Breakdown Voltage: 40V
  • Supply and Demand Status: Sufficient

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