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Same model may have multiple batches, images only for reference.
IXTH48P20P Real Image
Same model may have multiple batches, images only for reference.

IXTH48P20P

Part No IXTH48P20P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 48A TO-247
Datasheet
IXTH48P20P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 103nC @ 10V
Max Input Capacitance 5400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 462W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 (IXTH)
Dimension TO-247-3
Win Source Part Number 1049813-IXTH48P20P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH48P20P CAD Model

Description

The IXTH48P20P is a P-channel MOSFET manufactured by IXYS.

  • Maximum Power Dissipation: 462W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 48A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Application: high-frequency applications such as power supplies, inverters, and DC-DC converters
  • Market Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Temperature Range: -55°C to 150°C (TJ)
  • Packaging: Tube/Rail

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12+ $10.0513 $120.6156
18+ $9.7373 $175.2714
25+ $9.4231 $235.5775
32+ $9.1090 $291.4880
43+ $8.1667 $351.1681
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