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Same model may have multiple batches, images only for reference.
IXTN17N120L Real Image
Same model may have multiple batches, images only for reference.

IXTN17N120L

Part No IXTN17N120L
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 15A SOT-227B / N-Channel 1200 V 15A (Tc) 540W (Tc) Chassis Mount SOT-227B
Datasheet
IXTN17N120L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 900mOhm @ 8.5A, 20V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 8300 pF @ 25 V
Power Dissipation (Max) 540W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXTN17
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 10
Win Source Part Number 1324626-IXTN17N120L
Ultra Librarian 3D Model Ultra Librarian IXTN17N120L CAD Model

Description

The IXTN17N120L is a MOSFET transistor with N-channel FET type.

  • Drain to Source Voltage: 1200 V
  • Continuous Drain Current: 15A (Tc)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
  • Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
  • Power Dissipation: 540W (Tc)
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Case / Package: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
  • Series: HiPerFET™, Polar
  • Mounting Technology: Chassis Mount

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