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IXTN21N100

Part No IXTN21N100
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 21A SOT227B / N-Channel 1000 V 21A (Tc) 520W (Tc) Chassis Mount SOT-227B
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 250 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 25 V
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Chassis Mount
Supplier Device Package SOT-227B
Case / Package SOT-227-4, miniBLOC
Base Product Number IXTN21
RoHS Status ROHS3 Compliant
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number IXTN21N100-NDR
Standard Package 10
Win Source Part Number 1324577-IXTN21N100
Ultra Librarian 3D Model Ultra Librarian IXTN21N100 CAD Model

Description

The IXYS IXTN21N100 is a MOSFET transistor used in discrete semiconductor products.

  • Type: N-channel
  • Drain to Source Voltage: 1000V
  • Continuous Drain Current: 21A @ 25°C
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 500μA
  • Power Dissipation: 520W (Tc)
  • Supplier Device Package: SOT-227B
  • Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25V
  • Vgs (Max): ±20V
  • Operating Temperature: -55°C to 150°C (TJ)
  • ROHS3 Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $54.9987 $109.9974
3+ $45.1272 $135.3816
4+ $43.7170 $174.8680
6+ $42.3067 $253.8402
8+ $40.8965 $327.1720
10+ $36.6659 $366.6590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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