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Same model may have multiple batches, images only for reference.
IXTP152N085T Real Image
Same model may have multiple batches, images only for reference.

IXTP152N085T

Part No IXTP152N085T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 152A TO-220
Datasheet
IXTP152N085T Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 85V
Continuous Drain Current at 25°C 152A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 114nC @ 10V
Max Input Capacitance 5500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049866-IXTP152N085T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTP152N085T CAD Model

Description

The IXYS electronic component is a MOSFET technology product with N-channel polarity and a maximum power dissipation of 360W (Tc).

  • Supply and Demand Status: limited
  • Manufacturer Part Number: 1049866-IXTP152N085T
  • Packaging: tube/rail
  • Mounting: through hole
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: TO-220AB (TO-220-3)
  • Drain-Source Breakdown Voltage: 85V
  • Continuous Drain Current @ 25°C: 152A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 114nC @ 10V
  • Max Input Capacitance: 5500pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 7 mOhm @ 25A, 10V

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