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Same model may have multiple batches, images only for reference.
IXTP15N50L2 Real Image
Same model may have multiple batches, images only for reference.

IXTP15N50L2

Part No IXTP15N50L2
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 15A TO-220
Datasheet
IXTP15N50L2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 123nC @ 10V
Max Input Capacitance 4080pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 480 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1001587-IXTP15N50L2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTP15N50L2 CAD Model

Description

IXYS MOSFET is a high-performance N-channel transistor that is ideal for various applications.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 15A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Maximum Rds On: 480 mOhm @ 7.5A, 10V
  • Mounting: Through-hole
  • Packaging: Tube/rail
  • Dimension: TO-220-3
  • Category: Discrete semiconductor products
  • Status: Active

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