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Same model may have multiple batches, images only for reference.
IXTP26P20P Real Image
Same model may have multiple batches, images only for reference.

IXTP26P20P

Part No IXTP26P20P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description P-Channel Enhancement Mode Avalanche Rated
Datasheet
IXTP26P20P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarP
Packaging Tube
Channel Type Type P
Technology MOSFET
Drain Source Voltage 200V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 56nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2740pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 170 mOhm @ 13A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1191282-IXTP26P20P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTP26P20P
Introduction Date October 29, 2007
ECCN EAR99
Country of Origin United States of America
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXTP26P20P CAD Model

Description

The IXYS 635451 is a MOSFET technology-based electronic component that belongs to the PolarP series.

  • Package: TO-220-3
  • Mounting Style: Through Hole
  • Category: Discrete Semiconductor Products
  • Maximum Power Dissipation: 300W (Tc)
  • EOL Date (Estimated): 2024

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