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Same model may have multiple batches, images only for reference.
IXTP2N100P Real Image
Same model may have multiple batches, images only for reference.

IXTP2N100P

Part No IXTP2N100P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 2A TO-220
Datasheet
IXTP2N100P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 24.3nC @ 10V
Max Input Capacitance 655pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 86W (Tc)
Maximum Rds On at Id,Vgs 7.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049883-IXTP2N100P
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP2N100P CAD Model

Description

The IXYS IXTP2N100P is an N-channel MOSFET with a maximum power dissipation of 86W.

  • Drain-Source Breakdown Voltage: 1000V
  • Continuous Drain Current: 2A @ 25°C
  • Gate-Source Threshold Voltage: 4.5V @ 100μA
  • Maximum Gate Charge: 24.3nC @ 10V
  • Application: Industrial
  • Package: TO-220AB
  • Mounting Type: Through-Hole
  • Operating Temperature: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.8874 $60.6354
49+ $2.3691 $116.0859
76+ $2.2951 $174.4276
105+ $2.2211 $233.2155
135+ $2.1471 $289.8585
181+ $1.9249 $348.4069
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Availability: 7,150 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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