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IXTP3N120 Real Image IXTP3N120 real image10341
Same model may have multiple batches, images only for reference.
IXTP3N120 Real Image IXTP3N120 real image10341
IXTP3N120 Real Image IXTP3N120 real image10341
Same model may have multiple batches, images only for reference.

IXTP3N120

Part No IXTP3N120
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1.2KV 3A TO-220AB
Datasheet
IXTP3N120 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1200V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 4.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049887-IXTP3N120
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IXTP3N120 CAD Model

Description

IXTP3N120 is a N-channel MOSFET from IXYS.

  • Drain to Source Breakdown Voltage: 1200V
  • Power Dissipation: 200W (Tc)
  • Package: Through Hole TO-220AB
  • Maximum Rds On @ Id, Vgs: 4.5 Ohm @ 500mA, 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Continuous Drain Current @ 25°C: 3A (Tc)
  • Maximum Gate Charge: 42nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V

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13+ $4.0989 $53.2857
30+ $3.3632 $100.8960
47+ $3.2581 $153.1307
64+ $3.1530 $201.7920
83+ $3.0479 $252.9757
110+ $2.7326 $300.5860
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