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IXTP64N055T

Part No IXTP64N055T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 64A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 25μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 1420pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1049899-IXTP64N055T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTP64N055T CAD Model

Description

The supply and demand status of this component is sufficient.

  • Type: MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Win Source Part Number: 1049899-IXTP64N055T
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 64A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 25μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8113 $60.8475
175+ $0.6657 $116.4975
270+ $0.6450 $174.1500
375+ $0.6242 $234.0750
480+ $0.6033 $289.5840
645+ $0.5409 $348.8805
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 115,500 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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