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Same model may have multiple batches, images only for reference.
IXTQ120N20P Real Image
Same model may have multiple batches, images only for reference.

IXTQ120N20P

Part No IXTQ120N20P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 120A TO-3P
Datasheet
IXTQ120N20P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 152nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 714W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049911-IXTQ120N20P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ120N20P CAD Model

Description

The IXYS MOSFET is a high-quality electronic component designed to provide superior performance in a variety of applications.

  • Manufacturer: IXYS
  • Product: MOSFET
  • Application: Discrete semiconductor products
  • Manufacturer Part Number: 1049911-IXTQ120N20P

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Quantity Unit Price Ext. Price
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11+ $10.9265 $120.1915
17+ $10.5851 $179.9467
23+ $10.2437 $235.6051
30+ $9.9022 $297.0660
40+ $8.8778 $355.1120
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Availability: 5,800 pieces
MOQ: 5 pcs
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