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Same model may have multiple batches, images only for reference.
IXTQ170N10P Real Image
Same model may have multiple batches, images only for reference.

IXTQ170N10P

Part No IXTQ170N10P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 170A TO-3P
Datasheet
IXTQ170N10P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 198nC @ 10V
Max Input Capacitance 6000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 715W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049919-IXTQ170N10P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ170N10P CAD Model

Description

The IXYS IXTQ170N10P is a MOSFET technology-based semiconductor component suitable for use in various applications.

  • Package: TO-3P
  • Series: IXTQ
  • Maximum Drain-Source Voltage: 100V
  • Continuous Drain Current @ 25°C: 170A (Tc)
  • Maximum Power Dissipation: 715W (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Gate Charge (Qg): 198nC @ 10V
  • Input Capacitance (Ciss): 6000pF @ 25V
  • Maximum Vgs: ±20V
  • Rds On: 9 mOhm @ 500mA, 10V
  • Status: Active
  • Supply: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.8358 $59.1790
11+ $9.7114 $106.8254
16+ $9.4079 $150.5264
22+ $9.1044 $200.2968
29+ $8.8010 $255.2290
39+ $7.8905 $307.7295
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