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NVD5807NT4G

Part No NVD5807NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 23A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 31mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 603 pF @ 25 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number NVD580
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 650024-NVD5807NT4G
Ultra Librarian 3D Model Ultra Librarian NVD5807NT4G CAD Model

Description

ON Semiconductor NVD5807NT4G MOSFET

The NVD5807NT4G is a robust and efficient N-channel power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance MOSFET is a versatile component suitable for a wide range of applications, including automotive systems, power management, and high-speed switching circuits.

Constructed with advanced silicon technology, the NVD5807NT4G offers low on-resistance and high switching speed, making it an excellent choice for power conversion and management tasks where efficiency is paramount. It is designed to handle continuous drain currents up to several tens of amperes with minimal power loss, thanks to its low R<sub>DS(on) characteristic.

Key Features:

  • Low R<sub>DS(on): Provides reduced conduction losses and enhances overall efficiency.
  • High Continuous Drain Current (I<sub>D): Capable of conducting high amounts of current continuously, suitable for demanding applications.
  • High Switching Speed: Enables fast switching operations, which is crucial for reducing switching losses in power converters.
  • Robust Thermal Performance: With an excellent thermal design, this MOSFET can operate reliably over a wide temperature range.
  • Logic Level Gate Drive: Can be driven directly from microcontrollers or logic circuits, simplifying the design of control interfaces.

With a compact and durable package, the NVD5807NT4G ensures a small footprint on the PCB, allowing for space-saving designs without compromising on power handling capabilities. Its rugged construction is designed to withstand harsh environments, making it an ideal choice for automotive applications where reliability is critical.

Applications for the NVD5807NT4G are diverse and include power supplies, DC-DC converters, motor control circuits, and load switches. Its combination of efficiency, speed, and reliability makes it a preferred choice for designers who require a high-quality power MOSFET for their electronic designs.

ON Semiconductor's commitment to quality ensures that the NVD5807NT4G meets stringent standards, offering a reliable and high-performing solution for power switching and management challenges.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3825 $59.2875
370+ $0.3139 $116.1430
570+ $0.3042 $173.3940
785+ $0.2943 $231.0255
1,020+ $0.2845 $290.1900
1,360+ $0.2550 $346.8000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,400 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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