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Same model may have multiple batches, images only for reference.
IXTQ30N50P Real Image
Same model may have multiple batches, images only for reference.

IXTQ30N50P

Part No IXTQ30N50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 30A TO-3P
Datasheet
IXTQ30N50P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 4150pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 460W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P
Dimension TO-3P-3, SC-65-3
Win Source Part Number 1049928-IXTQ30N50P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTQ30N50P CAD Model

Description

The IXTQ30N50P is a MOSFET designed for use in Discrete Semiconductor Products.

  • Maximum Power Dissipation: 460 W (Tc)
  • Drain-Source Breakdown Voltage: 500 V
  • Continuous Drain Current @ 25°C: 30 A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Mounting Type: Through-Hole
  • Package: TO-3P
  • Temperature Range: -55°C to 150°C (TJ)
  • Market Popularity: Popular
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.1617 $61.6170
23+ $5.0558 $116.2834
36+ $4.8978 $176.3208
49+ $4.7398 $232.2502
64+ $4.5819 $293.2416
85+ $4.1079 $349.1715
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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