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IXTQ32N65X

Part No IXTQ32N65X
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 32A TO3P / N-Channel 650 V 32A (Tc) 500W (Tc) Through Hole TO-3P
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Ultra X
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 135mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2205 pF @ 25 V
Power Dissipation (Max) 500W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number IXTQ32
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346788-IXTQ32N65X
Ultra Librarian 3D Model Ultra Librarian IXTQ32N65X CAD Model

Description

The IXTQ32N65X is a N-Channel MOSFET (Metal Oxide) transistor from the Ultra X series of IXYS.

  • Drain to Source Voltage (Vdss): 650 V
  • Maximum Power Dissipation: 500W (Tc)
  • Mounting Type: Through Hole
  • Package/Case: TO-3P-3 or SC-65-3
  • Maximum Vgs: ±30V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Current Rating: 32A (Tc)
  • Rds On: 135mOhm @ 16A, 10V
  • Maximum Vgs(th): 5.5V @ 250μA
  • Maximum Gate Charge (Qg): 54 nC @ 10 V
  • Maximum Input Capacitance (Ciss): 2205 pF @ 25 V

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