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Same model may have multiple batches, images only for reference.
IXTQ32P20T
Same model may have multiple batches, images only for reference.

IXTQ32P20T

Part No IXTQ32P20T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 32A TO3P / P-Channel 200 V 32A (Tc) 300W (Tc) Through Hole TO-3P
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series TrenchP™
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 14500 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number IXTQ32
Standard Package 30
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346887-IXTQ32P20T
Ultra Librarian 3D Model Ultra Librarian IXTQ32P20T CAD Model

Description

The IXTQ32P20T is a TrenchP™ series P-channel MOSFET transistor.

  • Package: TO-3P-3, SC-65-3
  • Quantity: 30 pieces
  • Operating Temperature: -55°C to 150°C (TJ)
  • Drain to Source Voltage (Vdss): 200V
  • Power Dissipation (Max): 300W (Tc)
  • Current-Continuous Drain (Id): 32A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V

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