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IXTK3N250L

Name: IXTK3N250L
Brand: IXYS
SKU: 1346876
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXTK3N250L
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 2500V 3A TO264 / N-Channel 2500 V 3A (Tc) 417W (Tc) Through Hole TO-264 (IXTK)
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	Linear
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	2500 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 25 V
Power Dissipation (Max)	417W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-264 (IXTK)
Package / Case	TO-264-3, TO-264AA
Base Product Number	IXTK3
Standard Package	25
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1346876-IXTK3N250L
Ultra Librarian 3D Model	Ultra Librarian IXTK3N250L CAD Model

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Description

The IXTK3N250L is an N-Channel MOSFET (Metal Oxide) type electronic component manufactured by IXYS. It has a drain to source voltage (Vdss) of 2500V and a current-continuous drain (Id) at 25°C of 3A (Tc).

Type: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2500V
Current-Continuous Drain (Id) at 25°C: 3A (Tc)
Package: TO-264-3, TO-264AA
Packaging: Tube

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IXTK3N250L

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