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Same model may have multiple batches, images only for reference.
IXTQ40N50Q Real Image
Same model may have multiple batches, images only for reference.

IXTQ40N50Q

Part No IXTQ40N50Q
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 40A TO3P / N-Channel 500 V 40A (Tc) 500W (Tc) Through Hole TO-3P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Q Class
Package Box
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V
Power Dissipation (Max) 500W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3
Base Product Number IXTQ40
Standard Package 1
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346691-IXTQ40N50Q
Ultra Librarian 3D Model Ultra Librarian IXTQ40N50Q CAD Model

Description

The IXTQ40N50Q is an N-Channel MOSFET transistor from the Q Class series of IXYS. IXTQ40N50Q IXYS.

  • Package: TO-3P-3, SC-65-3
  • Drain to Source Voltage (Vdss): 500 V
  • Maximum Power Dissipation: 500W (Tc)
  • Maximum Gate-Source Voltage (Vgs): ±30V
  • Temperature Range: -55°C to 150°C (TJ)
  • Current-Continuous Drain (Id): 40A (Tc)
  • Maximum On-Resistance (Rds On): 160mOhm @ 500mA, 10V
  • Gate Charge (Qg): 130 nC @ 10 V
  • Input Capacitance (Ciss): 4500 pF @ 25 V

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