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Same model may have multiple batches, images only for reference.
IXTR170P10P Real Image
Same model may have multiple batches, images only for reference.

IXTR170P10P

Part No IXTR170P10P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 108A ISOPLUS247 / P-Channel 100 V 108A (Tc) 312W (Tc) Through Hole ISOPLUS247™
Datasheet
IXTR170P10P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarP™
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 85A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12600 pF @ 25 V
Power Dissipation (Max) 312W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS247™
Package / Case TO-247-3
Base Product Number IXTR170
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346718-IXTR170P10P
Ultra Librarian 3D Model Ultra Librarian IXTR170P10P CAD Model

Description

The IXYS MOSFET transistor is a P-Channel FET type that features a drain to source voltage of 100V and a power dissipation of 312W (Tc).

  • Mounting: through hole
  • Package/Case: TO-247-3
  • Transistor Type: single FET, MOSFET transistor
  • Series: PolarP™ series
  • Ideal for: Discrete Semiconductor Products such as transistors and FETs
  • Supplier: IXYS
  • Current-continuous drain (Id) @ 25°C: 108A (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
  • Input capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V

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