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Same model may have multiple batches, images only for reference.
IXTR20P50P Real Image
Same model may have multiple batches, images only for reference.

IXTR20P50P

Part No IXTR20P50P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 500V 13A ISOPLUS247 / P-Channel 500 V 13A (Tc) 190W (Tc) Through Hole ISOPLUS247™
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarP™
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 490mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5120 pF @ 25 V
Power Dissipation (Max) 190W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS247™
Package / Case TO-247-3
Base Product Number IXTR20
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346685-IXTR20P50P
Ultra Librarian 3D Model Ultra Librarian IXTR20P50P CAD Model

Description

The IXTR20P50P is a P-Channel MOSFET (Metal Oxide) transistor from the PolarP™ series of IXYS. IXTR20P50P IXYS.

  • Drain to Source Voltage (Vdss): 500 V
  • Maximum Power Dissipation: 190W (Tc)
  • Mounting: Through a hole
  • Package/Case: TO-247-3
  • Maximum Vgs: ±20V
  • Operating Temperature Range: -55°C ~ 150°C (TJ)
  • Current Rating: 13A (Tc)
  • Rds On: 490mOhm @ 10A, 10V
  • Maximum Vgs(th): 4.5V @ 250μA
  • Maximum Gate Charge (Qg): 103 nC @ 10 V
  • Maximum Input Capacitance (Ciss): 5120 pF @ 25 V

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