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Same model may have multiple batches, images only for reference.
IXTR36P15P Real Image
Same model may have multiple batches, images only for reference.

IXTR36P15P

Part No IXTR36P15P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 22A ISOPLUS247 / P-Channel 150 V 22A (Tc) 150W (Tc) Through Hole ISOPLUS247™
Datasheet
IXTR36P15P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarP™
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS247™
Package / Case TO-247-3
Base Product Number IXTR36
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346680-IXTR36P15P
Ultra Librarian 3D Model Ultra Librarian IXTR36P15P CAD Model

Description

The IXTR36P15P is a P-Channel MOSFET transistor used for power management.

  • Series: PolarP™
  • Drain to Source Voltage: 150V
  • Power Dissipation: 150W (Tc)
  • Drive Voltage: 10V
  • Package: Through Hole TO-247-3
  • Gate Charge: 55 nC @ 10 V
  • Current: 22A (Tc)
  • Rds On: 120mOhm @ 18A, 10V

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