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IXTT100N25P

Part No IXTT100N25P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 100A TO268 / N-Channel 250 V 100A (Tc) 600W (Tc) Surface Mount TO-268AA
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6300 pF @ 25 V
Power Dissipation (Max) 600W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Base Product Number IXTT100
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346756-IXTT100N25P
Ultra Librarian 3D Model Ultra Librarian IXTT100N25P CAD Model

Description

The 1346756-IXTT100N25P is an N-channel MOSFET transistor designed for various applications such as power supplies, inverters, and motor control.

  • Drain to Source Voltage: 250V
  • Continuous Drain Current: 100A @ 25°C
  • Maximum Power Dissipation: 600W
  • Gate-Source Voltage: ±20V
  • Package: TO-268-3, D²Pak (2 Leads + Tab), TO-268AA
  • Packaging: Tube packaging of 30 units
  • Low Rds On: 24mOhm @ 50A
  • Gate Charge: 185nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $43.6568 $87.3136
3+ $35.8209 $107.4627
5+ $34.7015 $173.5075
6+ $33.5821 $201.4926
8+ $32.4627 $259.7016
11+ $29.1045 $320.1495
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,080 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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