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IXTT36N50P

Name: IXTT36N50P
Brand: IXYS
SKU: 1346861
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXTT36N50P
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 36A TO268 / N-Channel 500 V 36A (Tc) 540W (Tc) Surface Mount TO-268AA
Datasheet	IXTT36N50P Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	Polar
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	170mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	85 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	5500 pF @ 25 V
Power Dissipation (Max)	540W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268AA
Package / Case	TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Base Product Number	IXTT36
Standard Package	30
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1346861-IXTT36N50P
Ultra Librarian 3D Model	Ultra Librarian IXTT36N50P CAD Model

Alternative Products

Description

The IXYS IXTT36N50P is an N-channel MOSFET transistor with a drain to source voltage of 500V and continuous drain current of 36A (Tc).

Power Dissipation: 540W (Tc)
Mounting: Surface mount
Package Quantity: 30
Category: Discrete Semiconductor Products
Series: Polar
Gate Voltage: ±30V
Temperature Range: -55°C to 150°C (TJ)
Maximum Rds On: 170mOhm @ 500mA and 10V
Gate Charge: 85 nC @ 10V
Input Capacitance: 5500 pF @ 25V
REACH: unaffected
MSL Level: 1 (Unlimited)
HTSUS Code: 8541.29.0095
Case/Package: TO-268-3, D2Pak (2 Leads + Tab), TO-268AA

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