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Same model may have multiple batches, images only for reference.
IXTT52N30P Real Image
Same model may have multiple batches, images only for reference.

IXTT52N30P

Part No IXTT52N30P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description PolarHT Power MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Series PolarHT
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 300V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3490pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 400W (Tc)
Rds On (Maximum) @ Id, Vgs 66 mOhm @ 500mA, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package TO-268
Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
RoHS State Request Verification
Win Source Part Number 1191300-IXTT52N30P
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Family Name IXTT52N30P
Introduction Date November 04, 2003
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IXTT52N30P CAD Model

Description

The IXTT52N30P is an N-channel MOSFET with a continuous drain current of 52A @ 25°C manufactured by IXYS.

  • Maximum On-State Resistance: 66 mOhm @ 500mA and 10V
  • Gate-Source Voltage Threshold: 5V @ 250μA
  • Gate Charge: 110nC @ 10V
  • Input Capacitance: 3490pF @ 25V
  • Drain-Source Voltage: 300V
  • Power Dissipation: 400W @ Tc
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Mounting: SMD
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $9.3622 $65.5354
16+ $7.6819 $122.9104
24+ $7.4418 $178.6032
33+ $7.2018 $237.6594
42+ $6.9616 $292.3872
56+ $6.2415 $349.5240
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Availability: 5,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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