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Same model may have multiple batches, images only for reference.
IXTT82N25P Real Image
Same model may have multiple batches, images only for reference.

IXTT82N25P

Part No IXTT82N25P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 82A TO268 / N-Channel 250 V 82A (Tc) 500W (Tc) Surface Mount TO-268AA
Datasheet
IXTT82N25P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 41A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 142 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V
Power Dissipation (Max) 500W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268AA
Package / Case TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Base Product Number IXTT82
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346835-IXTT82N25P
Ultra Librarian 3D Model Ultra Librarian IXTT82N25P CAD Model

Description

The IXTT82N25P is an N-channel MOSFET transistor from IXYS' Polar series.

  • Drain-to-Source Voltage: 250V
  • Continuous Drain Current: 82A
  • On-State Resistance: 35mOhm
  • Mounting Type: Surface Mount
  • Package: TO-268-3, D²Pak
  • Gate Charge: 142nC @ 10V
  • Input Capacitance: 4800pF @ 25V
  • Operating Temperature: -55°C to 150°C (TJ)
  • REACH Status: REACH Unaffected

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