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IXTU08N100P

Part No IXTU08N100P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1000V 8A TO251 / N-Channel 1000 V 8A (Tc) Through Hole TO-251AA
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series Polar
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Mounting Type Through Hole
Supplier Device Package TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number IXTU08
Standard Package 75
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346647-IXTU08N100P
Ultra Librarian 3D Model Ultra Librarian IXTU08N100P CAD Model

Description

The IXYS 1346647-IXTU08N100P is an N-channel MOSFET transistor designed for various applications such as power supplies, inverters, and motor control.

  • Drain to Source Voltage: 1000V
  • Continuous Drain Current: 8A @ 25°C
  • Maximum Power Dissipation: 600W
  • Gate-Source Voltage: ±20V
  • Package: TO-251-3 short leads, IPak, TO-251AA
  • Packaging: tube packaging of 75 units

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