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Same model may have multiple batches, images only for reference.
IXTU1R4N60P Real Image
Same model may have multiple batches, images only for reference.

IXTU1R4N60P

Part No IXTU1R4N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.4A TO251
Datasheet
IXTU1R4N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 25μA
Max Gate Charge 5.2nC @ 10V
Max Input Capacitance 140pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 9 Ohm @ 700mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1049962-IXTU1R4N60P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTU1R4N60P CAD Model

Description

The IXYS MOSFET is a high-performance N-channel power MOSFET that is designed for use in various applications.

  • Power Dissipation: 50W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 1.4A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5.5V @ 25μA
  • Maximum Gate Charge: 5.2nC @ 10V
  • Case/Package: TO-251
  • Dimension: TO-251-3 Short Leads, IPak, TO-251AA

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