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Same model may have multiple batches, images only for reference.
IXTU2N80P Real Image
Same model may have multiple batches, images only for reference.

IXTU2N80P

Part No IXTU2N80P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TO-251
Datasheet
IXTU2N80P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 50μA
Max Gate Charge 10.6nC @ 10V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 6 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1049963-IXTU2N80P
Popularity Medium
Supply and Demand Status Balance
Application Field Used in LED Lighting, Signalling, Industrial
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian IXTU2N80P CAD Model

Description

The IXTU2N80P is an N-Channel MOSFET that operates within a temperature range of -55°C to 150°C manufactured by IXYS.

  • Operating Temperature: -55°C to 150°C
  • Power Dissipation: 70W (Tc)
  • Mounting: Through Hole
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current: 2A (Tc) @ 25°C
  • Max Gate Charge: 10.6nC @ 10V
  • Max Input Capacitance: 440pF @ 25V
  • Maximum Rds On: 6 Ohm @ 1A, 10V
  • Ideal for: LED lighting, signalling, and industrial applications

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23+ $2.6115 $60.0645
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84+ $2.0767 $174.4428
115+ $2.0097 $231.1155
149+ $1.9427 $289.4623
199+ $1.7417 $346.5983
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Availability: 6,000 pieces
MOQ: 23 pcs
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