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Same model may have multiple batches, images only for reference.
IXTV22N60P Real Image
Same model may have multiple batches, images only for reference.

IXTV22N60P

Part No IXTV22N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 22A PLUS220 / N-Channel 600 V 22A (Tc) 400W (Tc) Through Hole PLUS220
Datasheet
IXTV22N60P Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Series PolarHV™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 25 V
Power Dissipation (Max) 400W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220
Package / Case TO-220-3, Short Tab
Base Product Number IXTV22
Standard Package 50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346795-IXTV22N60P
Ultra Librarian 3D Model Ultra Librarian IXTV22N60P CAD Model

Description

The IXTV22N60P is a MOSFET semiconductor device manufactured by IXYS.

  • Mounting Type: Through-hole
  • Package: Short tab TO-220-3 package
  • Supplier Device Package: PLUS220
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
  • Maximum Operating Temperature: -55°C ~ 150°C (TJ)

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