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Same model may have multiple batches, images only for reference.
IXTX1R4N450HV Real Image
Same model may have multiple batches, images only for reference.

IXTX1R4N450HV

Part No IXTX1R4N450HV
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 4500V 1.4A TO247PLUS / N-Channel 4500 V 1.4A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV
Datasheet
IXTX1R4N450HV Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr IXYS
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 4500 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id 6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 25 V
Power Dissipation (Max) 960W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247PLUS-HV
Package / Case TO-247-3 Variant
Base Product Number IXTX1
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1346702-IXTX1R4N450HV
Ultra Librarian 3D Model Ultra Librarian IXTX1R4N450HV CAD Model

Description

The IXTX1R4N450HV MOSFET transistor from IXYS is a high-performance N-channel FET with a drain-to-source voltage of 4500V and a continuous drain current of 1.4A @ 25°C.

  • Drain-to-Source Voltage: 4500V
  • Continuous Drain Current: 1.4A @ 25°C
  • On-Resistance: 40Ohm @ 50mA and 10V
  • Gate Charge: 88nC @ 10V
  • Input Capacitance: 3300pF @ 25V
  • Package: TO-247-3 Variant
  • Maximum Power Dissipation: 960W @ Tc
  • Operating Temperature: -55°C to 150°C (TJ)
  • Suitable for: power supplies, motor drives, and DC-DC converters

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